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| DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.5 0.2 3.2 0.2 2.7 0.2 10.0 0.3 FEATURES * Low On-Resistance 3 0.1 4 0.2 12.0 0.2 13.5 MIN. RDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 m Max. (VGS = 4 V, ID = 18 A) * Low Ciss Ciss =1 200 pF Typ. * Built-in G-S Protection Diode * Isolated TO-220 package 15.0 0.3 0.7 0.1 2.54 1.3 0.2 1.5 0.2 2.54 2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source 123 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Total Power Dissipation (TA = 25 C) Total Power Dissipation (TC = 25 C) Channel Temperature Storage Temperature * PW 10 s, duty cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 60 20 35 140 2.0 30 150 -55 to +150 V V A A W W C C MP-45F (ISOLATED TO-220) Drain Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D10515EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan (c) 1996 2SK2724 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 35 A, VGS = 0 IF = 35 A, VGS = 0, di/dt = 100 A/s ID = 35 A, VDD = 48 V, VGS = 10 V ID = 18 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 TEST CONDITION VGS = 10 V, ID = 18 A VGS = 4 V, ID = 18 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz 1 200 570 270 35 280 160 170 50 5.0 22 1.0 70 130 1.0 10 MIN. TYP. 20 33 1.5 23 10 10 MAX. 27 40 2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL RG RG = 10 VDD ID ID Wave Form VGS VGS Wave Form 0 10 % 90 % VGS(on) 90 % PG. 90 % ID D.U.T. IG = 2 mA PG. 50 RL VDD VGS 0 t 0 10 % td(on) tr td(off) 10 % tf ton toff t = 1 s Duty Cycle 1 % 2 2SK2724 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200 FORWARD BIAS SAFE OPERATING AREA 1 000 ID - Drain Current - A 100 d ite (V G S = 10 V) ID - Drain Current - A ID(pulse) = 140 A PW = ID(DC) 10 = 35 A 0 PW = VGS = 20 V 100 VGS = 10 V 10 RD S n (o )L im s Tc = 25 C 1 Single Pulse 0.1 1 PW P 1 m Li owe PW = s mr = 10 ite D d( iss 200 m s PT ip m s = atio 30 n W ) VGS = 4 V 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1 000 Tch = -25 C 25 C 125 C Pulsed ID - Drain Current - A 100 10 1 VDS = 10 V 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2724 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-a) = 62.5 C/W 10 1 Rth(ch-c) = 4.2 C/W 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 000 |yfs| - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 VDS = 10 V Pulsed Tch = -25 C 25 C 75 C 125 C 100 40 ID = 18 A 10 20 1 1 10 100 1 000 0 10 20 30 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 80 Pulsed 2.0 VDS = 10 V ID = 1 mA 60 1.5 40 VGS = 4 V 20 1.0 VGS = 10 V 0.5 0 0 -50 0 50 100 150 Tch - Channel Temperature - C 1 10 ID - Drain Current - A 100 4 2SK2724 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 VGS = 4 V 40 ISD - Diode Forward Current - A 80 100 10 1 VGS = 0 20 VGS = 10 V ID = 18 A -50 0 50 100 150 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss 1 000 Coss td(off) 100 tf tr td(on) 10 100 Crss 10 0.1 1 10 100 1.0 0.1 1.0 VDD =30 V VGS(on) =10 V RG =10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 di/dt = 50 A/ s VGS = 0 80 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 14 60 VGS 40 VDD = 12 V 30 V 48 V VDS 10 8 6 20 4 2 0 20 40 60 Qg - Gate Charge - nC 0 80 12 VDS - Drain to Source Voltage - V 100 10 1.0 0.1 1.0 10 100 IF - Diode Current - A VGS - Gate to Source Voltage - V trr - Reverse Recovery time - ns ID = 35 A 5 2SK2724 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037 6 2SK2724 [MEMO] 7 2SK2724 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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